{"id":5460,"date":"2025-05-15T13:39:54","date_gmt":"2025-05-15T11:39:54","guid":{"rendered":"https:\/\/measline.com\/?page_id=5460"},"modified":"2025-07-01T11:41:52","modified_gmt":"2025-07-01T09:41:52","slug":"study-defect-chemistry-controlled-gas-partial-pressure","status":"publish","type":"page","link":"https:\/\/measline.com\/index.php\/en-gb\/study-defect-chemistry-controlled-gas-partial-pressure\/","title":{"rendered":"Apparatus for the study of defect chemistry"},"content":{"rendered":"<p>[et_pb_section fb_built=&#8221;1&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; background_color=&#8221;rgba(0,0,0,0.05)&#8221; custom_margin=&#8221;0px|0px|0px|0px|false|false&#8221; custom_padding=&#8221;0px|0px|0px|0px|false|false&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_row column_structure=&#8221;1_2,1_2&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; custom_margin=&#8221;0px||0px||true|false&#8221; custom_padding=&#8221;11px||3px||false|false&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;1_2&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_button button_url=&#8221;@ET-DC@eyJkeW5hbWljIjp0cnVlLCJjb250ZW50IjoicG9zdF9saW5rX3VybF9wYWdlIiwic2V0dGluZ3MiOnsicG9zdF9pZCI6IjQ0MzkifX0=@&#8221; button_text=&#8221;Back to all projects&#8221; _builder_version=&#8221;4.22.1&#8243; _dynamic_attributes=&#8221;button_url&#8221; _module_preset=&#8221;default&#8221; custom_button=&#8221;on&#8221; button_text_color=&#8221;#225500&#8243; button_border_width=&#8221;0px&#8221; button_icon=&#8221;&#x4a;||divi||400&#8243; locked=&#8221;off&#8221; global_colors_info=&#8221;{}&#8221;][\/et_pb_button][\/et_pb_column][et_pb_column type=&#8221;1_2&#8243; _builder_version=&#8221;4.17.0&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_button button_url=&#8221;@ET-DC@eyJkeW5hbWljIjp0cnVlLCJjb250ZW50IjoicG9zdF9saW5rX3VybF9wYWdlIiwic2V0dGluZ3MiOnsicG9zdF9pZCI6IjU1MTcifX0=@&#8221; button_text=&#8221;Surface Physics Research Equipment&#8221; _builder_version=&#8221;4.27.4&#8243; _dynamic_attributes=&#8221;button_url&#8221; _module_preset=&#8221;default&#8221; custom_button=&#8221;on&#8221; button_text_color=&#8221;#225500&#8243; button_border_width=&#8221;0px&#8221; button_icon=&#8221;&#x4a;||divi||400&#8243; global_colors_info=&#8221;{}&#8221;][\/et_pb_button][\/et_pb_column][\/et_pb_row][\/et_pb_section][et_pb_section fb_built=&#8221;1&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_row _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;4_4&#8243; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<h1><span lang=\"en-US\">Apparatus for the study of defect chemistry of solid state<\/span><\/h1>\n<p><span lang=\"en-US\"><\/span><\/p>\n<p><span lang=\"en-US\"><\/span><\/p>\n<h3><span lang=\"en-US\">at high temperatures and various activities of gasses, based on the physical method for controlling the partial pressure of different gasses<\/span><\/h3>\n<p>[\/et_pb_text][et_pb_divider color=&#8221;#215500&#8243; divider_weight=&#8221;2px&#8221; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; custom_margin=&#8221;-23px||6px||false|false&#8221; global_colors_info=&#8221;{}&#8221;][\/et_pb_divider][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<p align=\"justify\">Determining the equilibrium concentration of defects at high temperatures is essential in studying innovative materials&#8217; physical and chemical properties, e.g., materials for gas sensors, heterogenous catalysis, high-temperature fuel cells, resistive switched memories, piezoelectric\/ferroelectric oxides, etc. For such analysis of the type of defect, their concentration and activation energy can be determined using different physical and chemical techniques.<\/p>\n<p align=\"justify\">The most popular method of defect chemistry is based on measuring the electrical conductivity as a function of the partial pressure of different oxidizing and reducing gases. Although such investigations are essential and have a long tradition, a crucial point is controlling the gas partial pressure, such as the oxygen partial pressure. The pressure can be adjusted by conventional gas mixing (buffer gases, like CO\/CO2 or H2\/H2O) or electrochemically using the oxygen pump (YSZ).<\/p>\n<p>[\/et_pb_text][\/et_pb_column][\/et_pb_row][et_pb_row column_structure=&#8221;1_2,1_2&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;1_2&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_image src=&#8221;https:\/\/measline.com\/wp-content\/uploads\/2025\/05\/Urzadzenie-do-analizy-defektow-2.jpg&#8221; alt=&#8221;Defect Analysis Device&#8221; title_text=&#8221;Defect Analysis Device&#8221; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][\/et_pb_image][et_pb_image src=&#8221;https:\/\/measline.com\/wp-content\/uploads\/2025\/06\/Schemat-pomiarowy-probek-w-ukladzie-czteroelektrodowym-1.jpg&#8221; alt=&#8221;Sample Measurement Scheme in a Four-Electrode System&#8221; title_text=&#8221;Sample Measurement Scheme in a Four-Electrode System&#8221; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][\/et_pb_image][\/et_pb_column][et_pb_column type=&#8221;1_2&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; custom_padding=&#8221;2px||0px|||&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<h3 align=\"justify\">Conductivity measurements under controlled partial pressures for investigating defect chemistry<\/h3>\n<p align=\"justify\">\n<p align=\"justify\">This new method for controlling partial pressure connected the possibility of generating the XHV or \u00a0UHV conditions and the precise introduction of the defined doses of various gases in the vacuum system. Additionally, in our apparatus, the partial pressure of the gases is not dependent on the temperature of the mixing gases or the temperature of the oxygen pump, which needs sufficient ionic conductivity; therefore, the YSZ pump or sensor cannot be used below 500 \u00b0C.<\/p>\n<p align=\"justify\"><span lang=\"en-US\"><\/span><\/p>\n<p align=\"justify\">The advantage of this technique is the ability to include, in the interpretation of data from electrical conductivity measurements (obtained in 4-point geometry), direct information about the physical and chemical properties of the surface, which are essential for the analysis of the mechanism of exchange between the gas and surface interior. This comparison doesn\u2019t directly offer the chemical and electrochemical methods. Using surface-sensitive methods for the study of stoichiometry, electronic structure (using XPS, synchrotron radiation, EELS), crystallography, defect distribution (LEED, STM, AFM), and measurement of local electrical conductivity (with atomic resolution-LCAFM) of the surface layer can broaden the field of analysis while interpreting data from macroscopic conductivity measurements only.\u00a0<\/p>\n<p>[\/et_pb_text][\/et_pb_column][\/et_pb_row][et_pb_row column_structure=&#8221;1_2,1_2&#8243; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;1_2&#8243; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<p align=\"justify\">Tests carried out for model oxides (here, the single SrTiO3 crystal) have shown perfect conformity between Brouwer\u2019s diagram and the point defect diagram, which has been determined based on classical control of the partial pressure.<\/p>\n<p>&nbsp;<\/p>\n<p>[\/et_pb_text][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<p align=\"justify\"><em><span lang=\"en-US\">Brouwer diagrams of model materials for defect chemistry (here SrTiO3 single crystal) determined with the apparatus for 2-point and (b) 4-point geometry.<\/span><\/em><\/p>\n<p>[\/et_pb_text][\/et_pb_column][et_pb_column type=&#8221;1_2&#8243; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_image src=&#8221;https:\/\/measline.com\/wp-content\/uploads\/2025\/05\/Diagramy-Brouwera-w-chemii-defektow.jpg&#8221; alt=&#8221;Brouwer diagrams of model materials for defect chemistry &#8221; title_text=&#8221;Brouwer diagrams of model materials for defect chemistry &#8221; _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][\/et_pb_image][\/et_pb_column][\/et_pb_row][\/et_pb_section][et_pb_section fb_built=&#8221;1&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; background_color=&#8221;rgba(0,0,0,0.05)&#8221; custom_padding=&#8221;37px|||||&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_row admin_label=&#8221;Wiersz&#8221; _builder_version=&#8221;4.16.0&#8243; _module_preset=&#8221;default&#8221; custom_padding=&#8221;||0px|||&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;4_4&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; min_height=&#8221;305px&#8221; custom_margin=&#8221;-12px||||false|false&#8221; custom_padding=&#8221;0px||3px||false|false&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<div><\/div>\n<div><\/div>\n<div>\n<h3 class=\"western\"><span>The most significant device features:<\/span><span><\/span><\/h3>\n<p><span><\/span><\/p>\n<\/div>\n<div>\n<ul>\n<li><strong>Independent of Gas Temperature and Oxygen Pump Limitations<\/strong><br data-start=\"475\" data-end=\"478\" \/>\u2013 Partial pressure control is not dependent on the temperature of gas mixtures or the operation of oxygen pumps<br data-start=\"596\" data-end=\"599\" \/>\u2013 Eliminates the need for YSZ oxygen pumps, which require ionic conductivity and cannot operate below 500\u202f\u00b0C<br data-start=\"718\" data-end=\"721\" \/>\u2013 Allows experiments at lower temperatures inaccessible to traditional electrochemical control systems<\/li>\n<li><strong>Precise Control of Gas Partial Pressure<\/strong><br data-start=\"205\" data-end=\"208\" \/>\u2013 Enables operation under XHV (extremely high vacuum) or UHV (ultra-high vacuum) conditions<br data-start=\"310\" data-end=\"313\" \/>\u2013 Allows accurate introduction of well-defined doses of various gases into the vacuum system<\/li>\n<li><strong>Possibility to obtain data on Surface Properties via Conductivity Measurements<\/strong><br data-start=\"897\" data-end=\"900\" \/>Enables simultaneous analysis of electrical conductivity (e.g. using 4-point probe geometry) and direct information on surface stoichiometry, electronic structure, defect distribution, local surface conductivity<\/li>\n<\/ul>\n<\/div>\n<p>[\/et_pb_text][\/et_pb_column][\/et_pb_row][\/et_pb_section][et_pb_section fb_built=&#8221;1&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; custom_padding=&#8221;30px||||false|false&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_row _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; custom_padding=&#8221;0px||0px||false|false&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;4_4&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<h3>Specification:<\/h3>\n<table border=\"1\" style=\"height: 100%; width: 100%; border-collapse: collapse;\">\n<tbody>\n<tr style=\"height: 104px;\">\n<td style=\"width: 23.9521%; height: 104px;\">Method<\/td>\n<td style=\"width: 76.0479%; height: 104px;\">\n<p align=\"justify\"><strong><span lang=\"en-US\">DC 4-point method (with triaxial shielding of the electrical connections)<\/span><\/strong><\/p>\n<\/td>\n<\/tr>\n<tr style=\"height: 56px;\">\n<td style=\"width: 23.9521%; height: 56px;\">\n<p align=\"justify\"><span lang=\"en-US\">Temperature<\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%; height: 56px;\">\n<p align=\"justify\"><span lang=\"en-US\">RT-1100\u00b0C (\u00b10.05\u00b0C )<\/span><\/p>\n<\/td>\n<\/tr>\n<tr style=\"height: 108px;\">\n<td style=\"width: 23.9521%; height: 108px;\"><span lang=\"en-US\">Basis vacuum<\/span><\/td>\n<td style=\"width: 76.0479%; height: 108px;\">\n<p><span lang=\"en-US\">p&lt;5\u00d710<\/span><sup><span style=\"font-family: Times New Roman, serif;\"><span style=\"font-size: medium;\"><span lang=\"en-US\">-10 <\/span><\/span><\/span><\/sup><span lang=\"en-US\">mbar (UHV)<\/span><\/p>\n<p><span lang=\"en-US\">p&lt;1\u00d710<span>\u203e\u00b9\u00b2<\/span><\/span><sup><span style=\"font-family: Times New Roman, serif;\"><span style=\"font-size: medium;\"><span lang=\"en-US\">\u00a0<\/span><\/span><\/span><\/sup><span lang=\"en-US\">mbar (XHV)<\/span><\/p>\n<\/td>\n<\/tr>\n<tr style=\"height: 156px;\">\n<td style=\"width: 23.9521%; height: 87px;\">Gas Pressure Adjustment<\/td>\n<td style=\"width: 76.0479%; height: 87px;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">from 10<span>\u203e\u2079<\/span><\/span><span lang=\"en-US\"> to 10<span>\u00b3<\/span><\/span><span lang=\"en-US\">mbar\u00a0 &#8211; dynamically <\/span><\/p>\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">from the pressure higher than 10<span>\u203e\u00b3<\/span><\/span><span style=\"font-family: Times New Roman, serif;\"><span style=\"font-size: medium;\"><span lang=\"en-US\">&#8211;<\/span><\/span><\/span><span lang=\"en-US\">10<span>\u00b3<\/span><\/span><span lang=\"en-US\">\u00a0-statically<\/span><\/p>\n<\/td>\n<\/tr>\n<tr style=\"height: 10px;\">\n<td style=\"width: 23.9521%; height: 10px;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">Determination of gas pressure<br \/><\/span><span lang=\"en-US\"> (e.g., <span>O\u2082<\/span><span>, N\u2082<\/span><span>, Ar, H\u2082<\/span><\/span><span lang=\"en-US\">) <\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%; height: 10px;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">calibrated vacuum gauge<br \/><\/span><span lang=\"en-US\"> (resolution 1% per decade to 10\u203e\u2074<span>\u00a0<\/span><\/span><span lang=\"en-US\">mbar, 0.01% per decade above 10\u203e\u2074<span>\u00a0<\/span><\/span><span lang=\"en-US\">mbar), <\/span><\/p>\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">optional: the partial pressure of different gases measured using a mass spectrometer<br \/>(10\u203e\u2074<span>\u00a0<\/span><\/span><span lang=\"en-US\">mbar direct, above 10\u203e\u2074<span>\u00a0<\/span><\/span><span lang=\"en-US\">mbar with additional differential pumping stage)<\/span><\/p>\n<p>&nbsp;<\/p>\n<\/td>\n<\/tr>\n<tr style=\"height: 10px;\">\n<td style=\"width: 23.9521%; height: 86px;\">\n<p align=\"justify\"><span lang=\"en-US\">The resistance of the sample <\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%; height: 86px;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">should not be higher than 10<span>\u00b9\u00b2<\/span><\/span><span lang=\"en-US\">\u00a0Ohm<\/span><\/p>\n<\/td>\n<\/tr>\n<tr style=\"height: 192px;\">\n<td style=\"width: 23.9521%; height: 120px;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">Measurement modes<\/span><span lang=\"en-US\"><\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%; height: 120px;\">\n<p align=\"justify\">I-const. I (100mA- 1fA), Vvar.( <span lang=\"en-US\">\u00b1 200V, adjustable compliance) <\/span><\/p>\n<p align=\"justify\"><span lang=\"en-US\">V-const. V<\/span><span lang=\"en-US\">max<\/span><span lang=\"en-US\"> (\u00b1 200V), I (100mA- 100fA, adjustable compliance),<\/span><\/p>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 23.9521%;\">\n<p align=\"justify\"><span lang=\"en-US\">Type of samples<\/span><span lang=\"en-US\"><\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%;\">\n<p align=\"justify\"><span lang=\"en-US\">single crystal, ceramic, powder, thin films <\/span><\/p>\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">max. dimension 1\u00d70.5\u00d70.3 cm<span>\u00b3<\/span><\/span><\/p>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 23.9521%;\">\n<p align=\"justify\"><span lang=\"en-US\">\u00a0<\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%;\">\n<p align=\"justify\"><span lang=\"en-US\">\u00a0<\/span><\/p>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 23.9521%;\">\n<p align=\"justify\"><span lang=\"en-US\">Method<\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%;\">\n<p align=\"justify\"><strong><span lang=\"en-US\">AC 4-point methods with lock-in technique ( f =1Hz- 1kHz)<\/span><\/strong><span lang=\"en-US\"><\/span><\/p>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 23.9521%;\">\n<p align=\"justify\"><span lang=\"en-US\">Temperature<\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">RT-1100\u00b0C (\u00b10.05\u00b0C)<\/span><strong><span lang=\"en-US\"><\/span><\/strong><\/p>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 23.9521%;\">\n<p align=\"justify\"><span lang=\"en-US\">The resistance of the sample<\/span><\/p>\n<\/td>\n<td style=\"width: 76.0479%;\">\n<p class=\"western\" align=\"justify\"><span lang=\"en-US\">should not be higher than 10<span>\u2079<\/span><\/span><span lang=\"en-US\">\u00a0Ohm<\/span><span lang=\"en-US\"><\/span><\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>[\/et_pb_text][\/et_pb_column][\/et_pb_row][et_pb_row _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; locked=&#8221;off&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_column type=&#8221;4_4&#8243; _builder_version=&#8221;4.16&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;][\/et_pb_text][et_pb_text _builder_version=&#8221;4.27.4&#8243; _module_preset=&#8221;default&#8221; global_colors_info=&#8221;{}&#8221;]<\/p>\n<p>We invite you to explore the publication presenting the results achieved with the device described above: <strong><span lang=\"en-US\">Ch. Rodenbucher et al. <\/span><span lang=\"en-US\">APL Mater. 9, 011106 (2021)<\/span><\/strong><\/p>\n<p>Explore other system configurations that offer extended functionality and broader application possibilities:<\/p>\n<p style=\"padding-left: 40px;\"><a href=\"https:\/\/measline.com\/index.php\/en-gb\/apparatus-for-the-study-of-the-electro-degradation-or-resistive-switching-phenomena\/\"><strong><span lang=\"en-US\">Apparatus for the study of the electro-degradation or resistive switching phenomena<\/span><\/strong><\/a><\/p>\n<p align=\"justify\" style=\"padding-left: 40px;\"><a href=\"https:\/\/measline.com\/index.php\/en-gb\/thermal-and-electrochemical-desorption-studies-apparatus\/\"><strong><span lang=\"en-US\">Apparatus for studies of thermally or electrochemically induced desorption processes<\/span><\/strong><\/a><\/p>\n<p style=\"padding-left: 40px;\"><strong><span lang=\"en-US\">System for impedance spectroscopic measurements at high temperature with control of the partial pressure in chamber<\/span><\/strong><\/p>\n<p>We also provide systems for <strong>ceramic thin-film deposition<\/strong> as well as <strong>cryostats for low-temperature measurements of material properties, including ferroelectric behavior<\/strong>.<\/p>\n<p align=\"justify\">\n<p align=\"justify\">\n<p>[\/et_pb_text][\/et_pb_column][\/et_pb_row][\/et_pb_section]<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Apparatus for the study of defect chemistry of solid state at high temperatures and various activities of gasses, based on the physical method for controlling the partial pressure of different gassesDetermining the equilibrium concentration of defects at high temperatures is essential in studying innovative materials&#8217; physical and chemical properties, e.g., materials for gas sensors, heterogenous [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":5465,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"on","_et_pb_old_content":"","_et_gb_content_width":"","footnotes":""},"class_list":["post-5460","page","type-page","status-publish","has-post-thumbnail","hentry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.6 - 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